深圳黄金树科技有限公司代理国内MOSFET，IC 集成电路，桥堆 二三极管 可控硅等电子产品， 产品主要应用于UPS、EPS、逆变电源、工业控制板、变频电源、开关电源、电力操作电源、小家电，新能源，汽车电子等高科技行业，并致力于推广供应环保无铅的绿色产品。 我们本着“诚信经营，互惠互赢”的理念贯穿供应，销售，服务的始终。我们始终将“创新，进取，诚信合作，品质，客户，服务至上”作为商务合作发展的基石，愿我们持续，共同发展！深圳黄金树科技有限公司是知名的电子元器件混合分销商，成立于深圳龙华区，主要产品有SPM、IG、MOSFET、FRD(快恢复）、可控硅、光耦、IC、MCU等。代理品牌有：无锡新洁能（NCE)，江苏捷捷微（JJM),福斯特（FIRST),台湾博盛（POTENS)，优势现货品牌有UTC友顺，安森美(ON)，英飞凌(Infineon) ,NXP,ADI,RICHTEK,TI等。
本公司是美国福斯特品牌一级代理商，公司长期备有FS全线产品库存，原厂原装现货库存，假一赔万，FIR8N80FG优势出货，联系电话：13510537787何
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 High voltage: BVDSS=800V  Low gate charge: Qg=40nC (Typ.)  Low drain-source On resistance: RDS(on)=1.8 Ω (Max.)  alanche tested  RoHS compliant device and ailable in halogen Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 800 V Gate-source voltage VGSS 30 V Drain current (DC) * ID Tc=25C 7 A Tc=100C 5.1 A Drain current (Pulsed) * IDM 28 A Single pulsed alanche energy (Note 2) EAS 300 mJ Power dissipation PD 60 W Junction temperature TJ 150 C Storage temperature range Tstg -55~150 C Features free device
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FIR8N80FGThermal Characteristics Characteristic Symbol Rating Unit Thermal resistance, junction to case Rth(j-c) Max. 2.08 C/W Thermal resistance, junction to ambient Rth(j-a) Max. 120 Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 800 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2 - 4 V Drain-source cut-off current IDSS VDS=800V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance RDS(ON) VGS=10V, ID  Forward transfer conductance (Note 3) gfs VDS=10V, ID=3.5A - 5.0 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz Output capacitance Coss - 110 - pF Reverse transfer capacitance Crss - 11 - Turn-on delay time (Note 3,4) td(on) VDD=400V, ID=7A, RG=25Ω - 30 - ns Rise time (Note 3,4) tr - 67 - Turn-off delay time (Note 3,4) td(off) - 58 - Fall time (Note 3,4) tf - 38 - Total gate charge (Note 3,4) Qg VDS=640V, VGS=10V, ID=7A - 26 - Gate-source charge nC (Note 3,4) Qgs - 7.0 - Gate-drain charge (Note 3,4) Qgd - 8.0 - Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) IS Integral reverse diode in the MOSFET - - 8 A Source current (Pulsed) ISM - - 32 A Forward voltage VSD VGS=0V, IS=7A - - 1.4 V Reverse recovery time (Note 3,4) trr IS=7A, VGS=0V dIF/dt=100A/us - 310 - ns Reverse recovery charge (Note 3,4) Qrr - 0.53 - uC