生产厂商：HQ Graphene

产品信息

MoS2 (2H phase) is a semiconductor with an indirect band gap of 1.2 eV. Monolayer MoS2 has a band gap of ~1.8 eV. Molybdenum Disulfide is used for example as a photodetector and transistor. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. MoS2 belongs to the group-VI transition metal dichalcogenides (TMDC). 

The 2H phase MoS2 crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, hexagonal/rectangular shaped and have a metallic appearance. We produce both n-type and p-type MoS2, having a typical charge carrier density of ~10¹⁵cm^-3 at room temperature.

2H-MoS2 crystal properties

X-ray diffraction on a 2H-MoS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal MoS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal MoS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal MoS2. Measurement was performed with a 785 nm Raman system at room temperature.